Full text of “IC Datasheet: EPROM” Jameco Part Number M NMOS Kbit (32Kb x 8) UV EPROM NOT FOR NEW DESIGN □ FAST. datasheet, pdf, data sheet, datasheet, data sheet, pdf, General NMOS K 32K x 8 UV EPROM Others with the same file for datasheet. (EPROM). The device is organized as 32K words by 8 bits (32K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin.

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Full text of ” IC Datasheet: Output Enable G is the output control and should be used to gate data to the output pins, inde- pendent of device selection. The M is in the programming mode when Vpp input is at 1 2. The bulk capacitor should be located near the power supply connection point.

It is recommended that a datasheeg j. Except for E, all like inputs including G of the parallel M may be epron. F ceramic capacitor be used on every device between Vcc and Vss- This should be dtaasheet high frequency capacitor of low inherent inductance and should be placed as close to the device as possible.

If the M is to be exposed to these types of lighting conditions for extended periods of time, it is suggested that opaque lables be put over the M window to prevent unintentional erasure.

This ensures that all deselected memory devices are in their low power standby mode and that the output pins are only active when data is required from a particular memory device. A new pattern can then be written to the device by following the pro- gramming procedure. For the STMi- croelectronics M, these two identifier bytes are given below. Chip Enable E is the power control and should be used for device selection. Two Line Output Control Because EPROMs are usually used in larger mem- ory arrays, this product features a 2 line control function which accommodates the use of multiple memory connection.

The only way to change a “0” to a “1 ” is by ultraviolet light erasure. This publication supersedes and replaces all information previously supplied. This mode is intended for use by programming equipment for the purpose of automatically matching the device to be programmed with its corresponding programming algorithm.


Although only “Os” will be programmed, both “1 s” and “Os” can be present in the data word.

Assuming that the addresses are stable, address access time tflivov is equal to the delay from E to output tELOv. Up to 25 one-millisecond pulses per byte are provided for before the epron program pulse is applied.

To activate this mode, the programming equipment must force However, STMicroeiectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or datashwet rights of third parties which may result from its use. STIVIicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroeiectronics.

A single 5V power supply is required in the read mode.

The levels required daasheet address and data inputs are TTL. It should be noted that sunlight and some type of fluorescent lamps have wavelengths in the A range.

The supply current, Ice, has three segments that are of interest to the system designer: When in the standby mode, the outputs are in a high impedance state, independent of the G input.

The recommended erasure procedure for eprpm M is exposure to short vyave ultraviolet light which has wavelength A. Standby Mode The M has a standby mode which reduces the maximum active power current from mA to 40mA.

The M should be placed within 2. Program Inhibit Programming of multiple Ms in parallel with different data is also easily accojnplished. The duration of the initial E pulse epprom is 1 ms, which will then be followed by a longer over- program pulse of length 3ms by n n is equal to the number of the initial one millisecond pulses applied Table 3.

Full text of “IC Datasheet: EPROM”

The magnitude of the transient current peaks is dependent on the capacitive and inductive loading of the device at the output. The length of the Over-program Pulse varies from 2. Programming reliability is also ensured as the incremental program margin of each byte is continually monitored to determine when it has been 272256 programmed.

  IEC 61089 PDF

Some lamps have a filter on their tubes which should be re- moved before erasure.

These are stress ratings oniy and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. The purpose of the bulk capacitor is to overcome the voltage drop caused by the inductive effects of RGB traces. Data is introduced by selectively programming “Os” into the desired bit locations. Research shows that constant exposure to room level fluorescent lighting could erase a typical M in about 3 years, while it would take approximately 1 week to cause erasure when exposed to direct sunlight.

For further information on any aspect of this device, please contact STMicroelectronics Sales Office nearest to you.

27256 – 27256 256K EPROM Datasheet

The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. Except for the rating “Operating Temperature Range”, stresses above those listed in datashheet Table “Absolute Maximum Ratings” may cause permanent damage to the device. All other address lines must be held at Vil during Electronic Signature mode. The Fast Programming Algorithm utilizes two different pulse types: Specifications mentioned in this publication are subject to change without notice.

Datasheft identifier bytes may then be sequenced from the device outputs by toggling address line AO from Vil to Vih. The integrated dose i. Data s available at the ojjtputs after the falling edge of G, assuming that E has been low and the ad- dresses have been stable for at least tAvav-tcLov.

The associated transient voltage peaks can be sup- pressed by complying with the two line output control and by properly selected decoupling ca- pacitors.

The two line control function allows: It is organized as Search the history of over billion web pages on the Internet. No license is granted by implication or otherwise under any patent or patent rights of STMicroeiectronics.